4 inch N type SiC ingots and SiC wafers manufacturer

As the leading manufacturer of SiC substrates ,HMT company supply high quality 4 inch and 6 inch SiC ingots. The average thickness of SiC ingots are 20mm. We provide conductive N type and semi-insulating type of SiC ingots. We supply the best price on the market in worldwide, please feel free to contact us for detailed specifications. Silicon Carbide is used as substrate for GaN-epitaxy to produce LEDs in the blue/UV range of the spectrum. SiC is the material of choice because it offers low lattice mismatch for III-nitride epitaxial layers and high thermal conductivity (important for lasers).

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Silicon Carbide(SiC) Substrate Wafer, SiC Ingots，SiC Epi Wafer, Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.